67 citations · 164 across the 5 of their papers we have counts for
7 papers
Impurity-assisted tunneling magnetoresistance under weak magnetic field
Oihana Txoperena, Yang Song, Lan Qing +4
Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferrom…
Exchange-driven magnetoresistance in silicon facilitated by electrical spin injection
Yuichiro Ando, Lan Qing, Yang Song +6
We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the eff…
Spin relaxation via exchange with donor impurity-bound electrons
Lan Qing, Jing Li, Ian Appelbaum +1
At low temperatures, electrons in semiconductors are bound to shallow donor impurity ions, neutralizing their charge in equilibrium. Inelastic scattering of other externally-inject…
Anisotropy-driven spin relaxation in germanium
Pengke Li, Jing Li, Lan Qing +2
A unique spin depolarization mechanism, induced by the presence of g-factor anisotropy and intervalley scattering, is revealed by spin transport measurements on long-distance germa…
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence
F. Pezzoli, L. Qing, A. Giorgioni +4
Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control ov…
Field-induced negative differential spin lifetime in silicon
Jing Li, Lan Qing, Hanan Dery +1
We show that the electric field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxatio…