Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices

Abstract

Evidence of spin precession and dephasing ("Hanle effect") induced by an external magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in semiconductor devices. However, when spin dephasing is very strong, Hanle effect in a uniaxial magnetic field can be impossible to measure. Using a Silicon device with lateral injector-detector separation over 2 millimeters, and geometrically-induced dephasing making spin transport completely incoherent, we show experimentally and theoretically that Hanle effect can still be measured using a two-axis magnetic field.

References in corpus (7)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Coherent spin transport through a 350-micron-thick Silicon wafer
• Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices
• Oblique Hanle Effect in Semiconductor Spin Transport Devices
• 35% magnetocurrent with spin transport through Si
• Spin lifetime in silicon in the presence of parasitic electronic effects

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• Anisotropy-driven spin relaxation in germanium
• Spin polarized electron transport near the Si/SiO2 interface
• Hyperfine Interactions and Spin Transport in Ferromagnet-Semiconductor Heterostructures
• Theory of Spin-Dependent Phonon-Assisted Optical Transitions in Silicon
• Signatures of dynamically polarized nuclear spins in all-electrical lateral spin transport devices
• Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory
• The Larmor clock and anomalous spin dephasing in silicon
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• Suppressing spin relaxation in silicon
• Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves
• Spin polarization control in a 2-dimensional semiconductor
• Modeling spin transport with current-sensing spin detectors
• The shape of the Hanle curve in spin-transport structures in the presence of the ac drive