Silicon spin communication

Abstract

Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on modulating spin polarization of a constant current in silicon wires. We provide figures of merit for this scheme by studying spin relaxation and drift-diffusion models in silicon.

3 pages, 3 figures

References in corpus (6)

• Electronic measurement and control of spin transport in Silicon
• Coherent spin transport through a 350-micron-thick Silicon wafer
• Comment: "Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal / silicon dioxide contacts" [Nature Commun. 2:245 doi:10.1038/ncomms125 (2011)]
• Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
• Spin injection in Silicon at zero magnetic field
• The Larmor clock and anomalous spin dephasing in silicon

Cited by in corpus (34)

• Observation of the inverse spin Hall effect in silicon
• Room-temperature ferroelectric switching of spin-to-charge conversion in GeTe
• What Makes Effective Gating Possible in Two-Dimensional Heterostructures?
• Analysis of phonon-induced spin relaxation processes in silicon
• Intrinsic Spin Lifetime of Conduction Electrons in Germanium
• Mapping between quantum dot and quantum well lasers: From conventional to spin lasers
• Spin-Lasers: Spintronics Beyond Magnetoresistance
• Donor-driven spin relaxation in multi-valley semiconductors
• Quantum Spin-Valley Hall Kink States: From Concept to Materials Design
• Field-induced negative differential spin lifetime in silicon
• Giant g factor tuning of long-lived electron spins in Ge
• Tailoring Chirp in Spin-Lasers
• Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation
• Electrical and thermal spin accumulation in germanium
• Photoinduced inverse spin Hall effect in Pt/Ge(001) at room temperature
• Spin-dependent optical properties in strained silicon and germanium
• Wurtzite (Ga,Mn)As nanowire shells with ferromagnetic properties
• Probing Tunneling Spin Injection into Graphene via Bias Dependence
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Suppressing spin relaxation in silicon
• Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates
• Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves
• Threshold behavior in spin lasers: Spontaneous emission and nonlinear gain
• Energy spectra of three electrons in Si/SiGe single and vertically coupled double quantum dots
• Intensity equations for birefringent spin lasers
• Study of the spin-pump-induced inverse spin-Hall effect in Bi doped n-type Si
• Polarization response of spin-lasers under amplitude modulation
• Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon
• Robustness of n-GaAs Carrier Spin Properties to 5 MeV Proton Irradiation
• Proximity-induced magnetization in graphene: Towards efficient spin gating
• The birefringent spin-laser as a system of coupled harmonic oscillators
• Half lives of proton emitters with KDE0v1 Skyrme interaction
• Spin Polarized Transport in Core Shell Nanowire of Silicon and Germanium
• Optical spin pumping in silicon