Spin-dependent optical properties in strained silicon and germanium

Abstract

We present a comprehensive theory of the circularly polarized luminescence and its dependence on strain in spin-polarized Si and Ge. Symmetries of wavefunctions and interactions are used to derive concise ratios between intensities of the right and left circularly polarized luminescence for each of the dominant phonon-assisted optical transitions. These ratios are then used to explain the circular polarization degrees of the luminescence peaks in the spectra of biaxially-strained Si and Ge, and of relaxed ${\mathrm{Si}}_{1-x}{\mathrm{Ge}}_x$ alloys. The spectra are numerically calculated by a combination of an empirical pseudopotential method, an adiabatic bond-charge model and a rigid-ion model.

16 pages, 10 figures, 3 tables

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Cited by in corpus (11)

• Polarization analysis of excitons in monolayer and bilayer transition-metal dichalcogenides
• Marrying excitons and plasmons in monolayer transition-metal dichalcogenides
• Giant g factor tuning of long-lived electron spins in Ge
• Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence
• Temperature-dependent photoluminescence in Ge: experiment and theory
• Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates
• Spin relaxation via exchange with donor impurity-bound electrons
• Spin-dependent inter- and intra-valley electron-phonon scattering in germanium
• Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium
• Resonant and Time-Resolved Spin Noise Spectroscopy
• Optical spin pumping in silicon