Spin-Orbit Symmetries of Conduction Electrons in Silicon

Abstract

We derive a spin-dependent Hamiltonian that captures the symmetry of the zone edge states in silicon. We present analytical expressions of the spin-dependent states and of spin relaxation due to electron-phonon interactions in the multivalley conduction band. We find excellent agreement with experimental results. Similar to the usage of the Kane Hamiltonian in direct band-gap semiconductors, the new Hamiltonian can be used to study spin properties of electrons in silicon.

4 pages, 1 figure, 1 table

References in corpus (3)

• Electronic measurement and control of spin transport in Silicon
• Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
• The Larmor clock and anomalous spin dephasing in silicon

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