Suppressing spin relaxation in silicon

Abstract

Uniaxial compressive strain along the [001] direction strongly suppresses the spin relaxation in silicon. When the strain level is large enough so that electrons are redistributed only in the two valleys along the strain axis, the dominant scattering mechanisms are quenched and electrons mainly experience intra-axis scattering processes (intravalley or intervalley scattering within valleys on the same crystal axis). We first derive the spin-flip matrix elements due to intra-axis electron scattering off impurities, and then provide a comprehensive model of the spin relaxation time due to all possible interactions of conduction-band electrons with impurities and phonons. We predict nearly three orders of magnitude improvement in the spin relaxation time of $\sim 10^{19}{\text{cm}}^{-3}$ antimony-doped silicon (Si:Sb) at low temperatures.

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References in corpus (15)

• Electronic measurement and control of spin transport in Silicon
• Coherent spin transport through a 350-micron-thick Silicon wafer
• An experimental demonstration of room-temperature spin transport in n-type Germanium epilayers
• Intrinsic Spin Lifetime of Conduction Electrons in Germanium
• Impurity-assisted tunneling magnetoresistance under weak magnetic field
• Donor-driven spin relaxation in multi-valley semiconductors
• Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
• Spin injection in Silicon at zero magnetic field
• Oblique Hanle Effect in Semiconductor Spin Transport Devices
• The Larmor clock and anomalous spin dephasing in silicon
• Non-ohmic spin transport in n-type doped silicon
• Spin-Polarized Transient Electron Trapping in Phosphorus-doped Silicon
• Spin lifetime in silicon in the presence of parasitic electronic effects
• Spin injection from Fe into Si(001): ab initio calculations and role of the Si complex band structure
• Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium