Spin transference and magnetoresistance amplification in a transistor
arXiv:cond-mat/0507378 · doi:10.1103/PhysRevB.73.161307
Abstract
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of transference of the spin diffusion effects in the semiconductor channel of a system with three magnetic terminals. A notable result of technological consequences is the room temperature amplification of the magneto-resistive effect, integrable with electronics circuits, demonstrated by computation of current dependence on magnetization configuration in such a system with currently achievable parameters.
arXiv comment4 pages, 3 figures, revised version, changed title, new figures
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Cited by in corpus (14)
- Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
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- Experimental Demonstration of XOR Operation in Graphene Magnetologic Gates at Room Temperature
- Optical probing of spin fluctuations of a single magnetic atom
- Spin transport theory in ferromagnet/semiconductor systems with non-collinear magnetization configurations
- Bipolar spintronics: From spin injection to spin-controlled logic
- Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance
- Probing Tunneling Spin Injection into Graphene via Bias Dependence
- Suppressing spin relaxation in silicon
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