Electric readout of magnetization dynamics in a ferromagnet-semiconductor system
arXiv:cond-mat/0601642 · doi:10.1063/1.2235881
Abstract
We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third connected to a capacitor, affect the currents and voltages. In a steady state, the voltage on the capacitor is related to spin accumulation in the channel. When the magnetization of one of the terminals is rotated, a transient current is triggered. This effect can be used for electrical detection of magnetization reversal dynamics of an electrode or for dynamical readout of the alignment of two magnetic contacts.
arXiv commentRevised version, 8 pages, 3 figures
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Cited by in corpus (6)
- Analysis of phonon-induced spin relaxation processes in silicon
- Intrinsic Spin Lifetime of Conduction Electrons in Germanium
- Spin transport theory in ferromagnet/semiconductor systems with non-collinear magnetization configurations
- Signal propagation in time-dependent spin transport
- Spin-signal propagation in time-dependent noncollinear spin transport
- Electrical expression of spin accumulation in ferromagnet/semiconductor structures