Lateral diffusive spin transport in layered structures

Abstract

A one dimensional theory of lateral spin-polarized transport is derived from the two dimensional flow in the vertical cross section of a stack of ferromagnetic and paramagnetic layers. This takes into account the influence of the lead on the lateral current underneath, in contrast to the conventional 1D modeling by the collinear configuration of lead/channel/lead. Our theory is convenient and appropriate for the current in plane configuration of an all-metallic spintronics structure as well as for the planar structure of a semiconductor with ferromagnetic contacts. For both systems we predict the optimal contact width for maximal magnetoresistance and propose an electrical measurement of the spin diffusion length for a wide range of materials.

arXiv comment4 pages, 3 figures

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• Experimental Demonstration of XOR Operation in Graphene Magnetologic Gates at Room Temperature
• Electric-field control of spin accumulation signals in silicon at room temperature
• Gate-tunable large magnetoresistance in an all-semiconductor spin-transistor-like device
• Spin transference and magnetoresistance amplification in a transistor
• The effect of spin drift on spin accumulation voltages in highly-doped Si
• Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation
• Spin transport theory in ferromagnet/semiconductor systems with non-collinear magnetization configurations
• Spin diffusion/transport in $n$-type GaAs quantum wells
• Electric readout of magnetization dynamics in a ferromagnet-semiconductor system
• Spintronics for electrical measurement of light polarization
• Spin polarization control by electric field gradients
• Modulation of Spin Accumulation by Nanoscale Confinement using Electromigration in a Metallic Lateral Spin Valve
• Effects of interface electric field on the magnetoresistance in spin device
• The shape of the Hanle curve in spin-transport structures in the presence of the ac drive
• Electrical expression of spin accumulation in ferromagnet/semiconductor structures