Spintronics for electrical measurement of light polarization
arXiv:cond-mat/0512712 · doi:10.1063/1.2338140
Abstract
The helicity of a circularly polarized light beam may be determined by the spin direction of photo-excited electrons in a III-V semiconductor. We present a theoretical demonstration how the direction of the ensuing electron spin polarization may be determined by electrical means of two ferromagnet/semiconductor Schottky barriers. The proposed scheme allows for time-resolved detection of spin accumulation in small structures and may have a device application.
arXiv commentRevised version, 8 two-column pages, 5 figures; Added: a comprehensive time dependent analysis, figures 3b-3c & 5, equations 6 & 13-16 and 3 references. submitted to Phys. Rev. B
References in corpus (8)
- Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor
- Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier
- Spin diffusion and injection in semiconductor structures: Electric field effects
- Spin accumulation in forward-biased MnAs/GaAs Schottky diodes
- Spontaneous Spin Coherence in n-GaAs Produced by Ferromagnetic Proximity Polarization
- Ferromagnetic imprinting of spin polarization in a semiconductor
- Lateral diffusive spin transport in layered structures
- Detection of spin voltaic effect in a p-n heterojunction