Theory of Spin Transport Induced by Ferromagnetic Proximity On a Two-Dimensional Electron Gas
arXiv:cond-mat/0309353 · doi:10.1103/PhysRevB.69.115339
Abstract
A theory of the proximity effects of the exchange splitting in a ferromagnetic metal on a two dimensional electron gas (2DEG) in a semiconductor is presented. The resulting spin-dependent energy and lifetime in the 2DEG create a marked spin-splitting in the driven in-plane current. The theory of the planar transport allows for current leakage into the ferromagnetic layer through the interface, which leads to a competition between drift and diffusion. The spin-dependent in-plane conductivity of the 2DEG may be exploited to provide a new paradigm for spintronics devices based on planar devices in a field-effect transistor configuration. An illustrative example is provided through the transport theory of a proposed spin-valve which consists of a field-effect transistor configuration with two ferromagnetic gates. Results are provided for two experimentally accessible systems: the silicon inversion layer and the naturally-formed InAs accumulation layer.
14 pages, 14 figures
References in corpus (8)
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Cited by in corpus (8)
- Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
- Lateral diffusive spin transport in layered structures
- Quantum Dynamics of a Particle with a Spin-dependent Velocity
- Photon-assisted electron transmission resonance through a quantum well with spin-orbit coupling
- Optical Orientation in Ferromagnet/Semiconductor Hybrids
- Spin pumping into two-dimensional electron systems
- Solid-State Spin-Photon Quantum Interface without Spin-Orbit Coupling
- Electrical expression of spin accumulation in ferromagnet/semiconductor structures