Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation

Abstract

Using a two-dimensional finite-differences scheme to model spin transport in silicon devices with lateral geometry, we simulate the effects of spin relaxation at interfacial boundaries, i.e. the exposed top surface and at an electrostatically-controlled backgate with SiO_2 dielectric. These gate-voltage-dependent simulations are compared to previous experimental results and show that strong spin relaxation due to extrinsic effects yield an Si/SiO_2 interfacial spin lifetime of ~ 1ns, orders of magnitude lower than lifetimes in the bulk Si, whereas relaxation at the top surface plays no substantial role. Hall effect measurements on ballistically injected electrons gated in the transport channel yield the carrier mobility directly and suggest that this reduction in spin lifetime is only partially due to enhanced interfacial momentum scattering which induces random spin flips as in the Elliott effect. Therefore, other extrinsic mechanisms such as those caused by paramagnetic defects should also be considered in order to explain the dramatic enhancement in spin relaxation at the gate interface over bulk values.

References in corpus (6)

• Coherent spin transport through a 350-micron-thick Silicon wafer
• Silicon spin communication
• Spin-Orbit Symmetries of Conduction Electrons in Silicon
• Proposal for a Topological Plasmon Spin Rectifier
• The Larmor clock and anomalous spin dephasing in silicon
• Spin-Polarized Transient Electron Trapping in Phosphorus-doped Silicon

Cited by in corpus (5)

• Analysis of phonon-induced spin relaxation processes in silicon
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• Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure
• Evidence of Pure Spin-Current Generated by Spin Pumping in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures
• Spin transport enhancement by controlling the Ag growth in lateral spin valves