Spin resonance of 2D electrons in a large-area silicon MOSFET

Abstract

We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2 interface. The signal and its intensity show a pronounced dependence on applied gate voltage. At gate voltages below the threshold of the MOSFET, the signal is from weakly confined, isolated electrons as evidenced by the Curie-like temperature dependence of its intensity. The situation above threshold appears more complicated. These large-area MOSFETs provide the capability to controllably tune from insulating to conducting regimes by adjusting the gate voltage while monitoring the state of the 2D electron spins spectroscopically.

7 pages, 3 figures, submitted to Physica E special edition for EPS2DS-17

References in corpus (2)

• Practical design and simulation of silicon-based quantum dot qubits
• Design and proof of concept for silicon-based quantum dot quantum bits

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• Charge pumping under spin resonance in Si(100) metal-oxide-semiconductor transistors
• Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance