activity
20072025
most citedSpin resonance of 2D electrons in a large-area silicon MOSFET

12 citations · 12 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2025

Physisorption on Nanomechanical Resonators: The Overlooked Influence of Trace Moisture

Hemant Kumar Verma, Suman Kumar Mandal, Darkasha Khan +6

Short gas pulses introduced in a vacuum chamber have long been utilized to showcase the ultra-low mass resolutions achievable with nanomechanical resonators. The resonance frequenc…

cond-mat.mtrl-sci2025

How to Reliably Measure Carrier Mobility in Highly Resistive Lead Halide Perovskites with Photo-Hall Experiment

Soumen Kundu, Yeswanth Pattipati, Krishnamachari Lakshmi Narasimhan +1

Mobility measurements in highly resistive methylammonium lead iodide (MAPI) are challenging due to high impedance, ion drift, and low mobility. We show that we can address the chal…

physics.app-ph2023

Large electro-opto-mechanical coupling in VO2 neuristors

Upanya Khandelwal, Rama Satya Sandilya, Rajeev Kumar Rai +8

Biological neurons are electro-mechanical systems, where the generation and propagation of an action potential is coupled to generation and transmission of an acoustic wave. Neuris…

cond-mat.mtrl-sci2023

Giant electromechanical response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si 100

Sandeep Vura, Shubham Kumar Parate, Subhajit Pal +15

Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoe…

physics.app-ph2017

Methylamine Vapor Exposure for Improved Morphology and Stability of Cesium-Methylammonium Lead Halide Perovskite Thin-Films

Akash Singh, Arun Singh Chouhan, Sushobhan Avasthi

Mixed-cation Cesium-Methylammonium lead halide perovskite (CsxMA1-xPbI3-xBrx) thin-films have been used to demonstrate stable and efficient perovskite devices. However, a systemati…

cond-mat.mtrl-sci2007★ 12 cited

Spin resonance of 2D electrons in a large-area silicon MOSFET

S. Shankar, A. M. Tyryshkin, S. Avasthi +1

We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to ar…