Spin resonance of 2D electrons in a large-area silicon MOSFET
arXiv:0710.1216 · doi:10.1016/j.physe.2007.10.030
Abstract
We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2 interface. The signal and its intensity show a pronounced dependence on applied gate voltage. At gate voltages below the threshold of the MOSFET, the signal is from weakly confined, isolated electrons as evidenced by the Curie-like temperature dependence of its intensity. The situation above threshold appears more complicated. These large-area MOSFETs provide the capability to controllably tune from insulating to conducting regimes by adjusting the gate voltage while monitoring the state of the 2D electron spins spectroscopically.
arXiv comment7 pages, 3 figures, submitted to Physica E special edition for EPS2DS-17
References in corpus (4)
- Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures
- Practical design and simulation of silicon-based quantum dot qubits
- Design and proof of concept for silicon-based quantum dot quantum bits
- Screening Breakdown on the Route toward the Metal-Insulator Transition in Modulation Doped Si/SiGe Quantum Wells
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