12 citations · 12 across the 6 of their papers we have counts for
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How to Reliably Measure Carrier Mobility in Highly Resistive Lead Halide Perovskites with Photo-Hall Experiment
Soumen Kundu, Yeswanth Pattipati, Krishnamachari Lakshmi Narasimhan +1
Mobility measurements in highly resistive methylammonium lead iodide (MAPI) are challenging due to high impedance, ion drift, and low mobility. We show that we can address the chal…
Giant electromechanical response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si 100
Sandeep Vura, Shubham Kumar Parate, Subhajit Pal +15
Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoe…
Spin resonance of 2D electrons in a large-area silicon MOSFET
S. Shankar, A. M. Tyryshkin, S. Avasthi +1
We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to ar…