48 citations · 231 across the 10 of their papers we have counts for
10 papers
Comprehensive Demonstration of Spin-Hall Hanle Effects in Epitaxial Pt Thin Films
Jing Li, Andrew H. Comstock, Dali Sun +1
We demonstrate a nonlinear Hall effect due to the boundary spin accumulation in Pt films grown on Al2O3 substrates. This Hall effect and the previously demonstrated Hanle magnetore…
Microwave manipulation of electrically injected spin polarized electrons in silicon
C. C. Lo, J. Li, I. Appelbaum +1
We demonstrate microwave manipulation of the spin states of electrically injected spin-polarized electrons in silicon. Although the silicon channel is bounded by ferromagnetic meta…
Spin relaxation via exchange with donor impurity-bound electrons
Lan Qing, Jing Li, Ian Appelbaum +1
At low temperatures, electrons in semiconductors are bound to shallow donor impurity ions, neutralizing their charge in equilibrium. Inelastic scattering of other externally-inject…
Anisotropy-driven spin relaxation in germanium
Pengke Li, Jing Li, Lan Qing +2
A unique spin depolarization mechanism, induced by the presence of g-factor anisotropy and intervalley scattering, is revealed by spin transport measurements on long-distance germa…
Field-induced negative differential spin lifetime in silicon
Jing Li, Lan Qing, Hanan Dery +1
We show that the electric field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxatio…
Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation
Jing Li, Ian Appelbaum
Using a two-dimensional finite-differences scheme to model spin transport in silicon devices with lateral geometry, we simulate the effects of spin relaxation at interfacial bounda…