30 citations · 78 across the 3 of their papers we have counts for
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cond-mat.mtrl-sci2011★ 21 cited
Spin-Polarized Transient Electron Trapping in Phosphorus-doped Silicon
Yuan Lu, Jing Li, Ian Appelbaum
Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes:…
cond-mat.mtrl-sci2008★ 30 cited
Oblique Hanle Effect in Semiconductor Spin Transport Devices
Jing Li, Biqin Huang, Ian Appelbaum
Spin precession and dephasing ("Hanle effect") provides an unambiguous means to establish the presence of spin transport in semiconductors. We compare theoretical modeling with exp…
cond-mat.mtrl-sci2007★ 27 cited
Non-ohmic spin transport in n-type doped silicon
Hyuk-Jae Jang, Jing Xu, Jing Li +2
We demonstrate the injection and transport of spin-polarized electrons through n-type doped silicon with in-plane spin-valve and perpendicular magnetic field spin precession and de…