Non-ohmic spin transport in n-type doped silicon

Abstract

We demonstrate the injection and transport of spin-polarized electrons through n-type doped silicon with in-plane spin-valve and perpendicular magnetic field spin precession and dephasing ("Hanle effect") measurements. A voltage applied across the transport layer is used to vary the confinement potential caused by conduction band-bending and control the dominant transport mechanism between drift and diffusion. By modeling transport in this device with a Monte-Carlo scheme, we simulate the observed spin polarization and Hanle features, showing that the average transit time across the short Si transport layer can be controlled over 4 orders of magnitude with applied voltage. As a result, this modeling allows inference of a long electron spin lifetime, despite the short transit length.

6 pages, 7 figures

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Cited by in corpus (11)

• Spin dynamics in semiconductors
• Analysis of phonon-induced spin relaxation processes in silicon
• Spin polarized electron transport near the Si/SiO2 interface
• Signatures of dynamically polarized nuclear spins in all-electrical lateral spin transport devices
• Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory
• Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure
• Spin-Polarized Transient Electron Trapping in Phosphorus-doped Silicon
• Reverse Schottky-Asymmetry Spin Current Detectors
• Suppressing spin relaxation in silicon
• Evidence of Pure Spin-Current Generated by Spin Pumping in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures
• Modeling spin transport with current-sensing spin detectors