Experimental realization of a silicon spin field-effect transistor

Abstract

A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin direction at the spin detector and hence the output collector current, this comprises a spin field-effect transistor. An improved hot-electron spin injector providing ~115% magnetocurrent, corresponding to at least ~38% electron current spin polarization after transport through 10 microns undoped single-crystal silicon, is used for maximum current modulation.

References in corpus (11)

• Spintronics: Fundamentals and applications
• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Spatial imaging of the spin Hall effect and current-induced polarization in two-dimensional electron gases
• Electron Spin-Relaxation Times of Phosphorus Donors in Silicon
• Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
• Theory of spin-polarized transport in semiconductor heterojunctions: Proposal for spin injection and detection in silicon
• Controlling spin in an electronic interferometer with spin-active interfaces
• Transit-Time Spin Field-Effect-Transistor
• 35% magnetocurrent with spin transport through Si
• Spin lifetime in silicon in the presence of parasitic electronic effects

Cited by in corpus (15)

• Semiconductor Spintronics
• Spin dynamics in semiconductors
• Coherent spin transport through a 350-micron-thick Silicon wafer
• Electron Spin for Classical Information Processing: A Brief Survey of Spin-Based Logic Devices, Gates and Circuits
• Spin polarized electron transport near the Si/SiO2 interface
• Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices
• Non-ohmic spin transport in n-type doped silicon
• Non-linear ballistic response of quantum spin-Hall edge states
• Reverse Schottky-Asymmetry Spin Current Detectors
• A Brief Review of Ferroelectric Control of Magnetoresistance in Organic Spin Valves
• Modeling of Spin Metal-Oxide-Semiconductor Field-Effect-Transistor: A Non-Equilibrium Green's Function Approach with Spin Relaxation
• Modeling spin transport with current-sensing spin detectors
• Robustness of n-GaAs Carrier Spin Properties to 5 MeV Proton Irradiation
• Towards tunable graphene phononic crystals
• Time-resolved lateral spin-caloric transport of optically generated spin packets in n-GaAs