Experimental realization of a silicon spin field-effect transistor

Abstract

A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin direction at the spin detector and hence the output collector current, this comprises a spin field-effect transistor. An improved hot-electron spin injector providing ~115% magnetocurrent, corresponding to at least ~38% electron current spin polarization after transport through 10 microns undoped single-crystal silicon, is used for maximum current modulation.

References in corpus (5)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Transit-Time Spin Field-Effect-Transistor
• 35% magnetocurrent with spin transport through Si
• Spin lifetime in silicon in the presence of parasitic electronic effects

Cited by in corpus (5)

• Coherent spin transport through a 350-micron-thick Silicon wafer
• Electron Spin for Classical Information Processing: A Brief Survey of Spin-Based Logic Devices, Gates and Circuits
• Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices
• Non-ohmic spin transport in n-type doped silicon
• Modeling of Spin Metal-Oxide-Semiconductor Field-Effect-Transistor: A Non-Equilibrium Green's Function Approach with Spin Relaxation