Reverse Schottky-Asymmetry Spin Current Detectors

Abstract

By reversing the Schottky barrier-height asymmetry in hot-electron semiconductor-metal-semiconductor ballistic spin filtering spin detectors, we have achieved: 1. Demonstration of >50% spin polarization in silicon, resulting from elimination of the ferromagnet/silicon interface on the transport channel detector contact, and 2. Evidence of spin transport at temperatures as high as 260K, enabled by an increase of detector Schottky barrier height.

minor edits, additional refs

References in corpus (11)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Coherent spin transport through a 350-micron-thick Silicon wafer
• Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession
• Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
• Experimental realization of a silicon spin field-effect transistor
• Spin polarized electron transport near the Si/SiO2 interface
• Signatures of dynamically polarized nuclear spins in all-electrical lateral spin transport devices
• Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices
• Non-ohmic spin transport in n-type doped silicon
• 35% magnetocurrent with spin transport through Si

Cited by in corpus (6)

• Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory
• Spin-Polarized Transient Electron Trapping in Phosphorus-doped Silicon
• A Brief Review of Ferroelectric Control of Magnetoresistance in Organic Spin Valves
• Evidence of Pure Spin-Current Generated by Spin Pumping in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures
• Spin relaxation via exchange with donor impurity-bound electrons
• Spin transport in non-degenerate Si with a spin MOSFET structure at room temperature