Signatures of dynamically polarized nuclear spins in all-electrical lateral spin transport devices

Abstract

The effect of nuclear spins in Fe/GaAs all-electrical spin-injection devices is investigated. At temperatures below 50 K, strong modifications of the non-local spin signal are found that are characteristic for hyperfine coupling between conduction electrons and dynamically polarized nuclear spins. The perpendicular component of the nuclear Overhauser field depolarizes electron spins near zero in-plane external magnetic field, and can suppress such dephasing when antialigned with the external field, leading to satellite peaks in a Hanle measurement. The features observed agree well with a Monte Carlo simulation of the spin diffusion equation including hyperfine interaction, and are used to study the nuclear spin dynamics and relate it to the spin polarization of injected electrons.

6 pages, 4 figures

References in corpus (8)

• Electronic spin transport and spin precession in single graphene layers at room temperature
• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Suppressing Spin Qubit Dephasing by Nuclear State Preparation
• Dynamic Nuclear Polarization with Single Electron Spins
• Electrical spin injection and detection in lateral all-semiconductor devices
• Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
• Non-ohmic spin transport in n-type doped silicon

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• Absence of hyperfine effects in ${}^{13}$C-graphene spin valve devices
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