Electrical spin injection and detection in lateral all-semiconductor devices

Abstract

Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin aligning contacts. The conversion of spin-polarized holes into spin-polarized electrons via Esaki tunnelling leaves its mark in a bias dependence of the spin-injection efficiency, which at maximum reaches the relatively high value of 50%.

11 pages, 3 figures, sent to PRL

References in corpus (3)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Lithographic engineering of anisotropies in (Ga,Mn)As
• Spin-dependent tunneling in modulated structures of (Ga,Mn)As

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