Controlled rotation of electrically injected spins in a non-ballistic spin field-effect transistor
arXiv:2303.01843 · doi:10.1021/acs.nanolett.3c00369
Abstract
Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few reports on electrically controlled spin precession in sFET-like devices. These devices operated in the ballistic regime, as postulated in the original sFET proposal, and hence need high SOC channel materials in practice. Here, we demonstrate gate-controlled precession of spins in a non-ballistic sFET using an array of narrow diffusive wires as a channel between a spin source and a spin drain. Our study shows that spins traveling in a semiconducting channel can be coherently rotated on a distance far exceeding the electrons mean free path, and spin-transistor functionality can be thus achieved in non-ballistic channels with relatively low SOC, relaxing two major constraints of the original sFET proposal.
arXiv commentMain text: 21 pages, 4 figures. Supplementary Information:11 pages, 4 figures
References in corpus (22)
- Electronic spin transport and spin precession in single graphene layers at room temperature
- Non-ballistic spin field-effect transistor
- Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
- Gate-Controlled Spin-Orbit Quantum Interference Effects in Lateral Transport
- All-electric all-semiconductor spin field effect transistors
- Spin Hall effect transistor
- Direct mapping of the formation of a persistent spin helix: Supplementary information
- Spin Relaxation Anisotropy in Two-Dimensional Semiconductor Systems
- Suppression of Spin Relaxation in Submicron InGaAs Wires
- Electrical spin injection and detection in lateral all-semiconductor devices
- Performance of a spin-based insulated gate field effect transistor
- Spin Orientation and Spin Precession in Inversion-Asymmetric Quasi Two-Dimensional Electron Systems
- Direct determination of spin orbit interaction coefficients and realization of the persistent spin helix symmetry
- Electrical Spin Injection into Silicon using MgO Tunnel Barrier
- Anisotropic spin splitting and spin relaxation in asymmetric zinc-blende semiconductor quantum structures
- Role of linear and cubic terms for the drift-induced Dresselhaus spin-orbit splitting in a two-dimensional electron gas
- Universal Rashba Spin Precession of Two-Dimensional Electrons and Holes
- Voltage controlled spin precession
- Analysis of the two dimensional Datta-Das Spin Field Effect Transistor
- Transition of a 2D spin mode to a helical state by lateral confinement
- Tunneling Anisotropic Spin Polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices
- Modeling of diffusion of injected electron spins in spin-orbit coupled microchannels