Tunneling Anisotropic Spin Polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

Abstract

We report here on anisotropy of spin polarization obtained in lateral all-semiconductor all-electrical spin injection devices, employing $p^{+}-$(Ga,Mn)As/$n^{+}-$GaAs Esaki diode structures as spin aligning contacts, resulting from the dependence of the efficiency of spin tunneling on the orientation of spins with respect to different crystallographic directions. We observed an in-plane anisotropy of $8$ in case of spins oriented either along $[1\bar{1}0]$ or $[110]$ directions and $25$ anisotropy between in-plane and perpendicular-to-plane orientation of spins.

9 pages, 3 figures

References in corpus (3)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electrical spin injection and detection in lateral all-semiconductor devices
• Spin-dependent tunneling in modulated structures of (Ga,Mn)As

Cited by in corpus (4)

• Spin dynamics in semiconductors
• Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface
• Controlled rotation of electrically injected spins in a non-ballistic spin field-effect transistor
• Spin gapped metals: A novel class of materials for multifunctional spintronic devices