Voltage-controlled tunneling anisotropic magneto-resistance of a ferromagnetic $p^{++}$-(Ga,Mn)As/$n^{+}$-GaAs Zener-Esaki diode

Abstract

The large tunneling anisotropic magneto-resistance of a single $p^{++}$-(Ga,Mn)As/$n^{+}$-GaAs Zener-Esaki diode is evidenced in a perpendicular magnetic field over a large temperature and voltage range. Under an applied bias, the tunnel junction transparency is modified, allowing to continuously tune anisotropic transport properties between the tunneling and the ohmic regimes. Furthermore, an asymmetric bias-dependence of the anisotropic tunneling magneto-resistance is also observed: a reverse bias highlights the full (Ga,Mn)As valence band states contribution, whereas a forward bias only probes part of the density of states and reveals opposite contributions from two subbands.

arXiv comment11 pages, 3 figures

References in corpus (7)

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Cited by in corpus (7)

• Interface-Induced Phenomena in Magnetism
• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
• Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: spin-orbit coupling in magnetic tunnel junctions
• Tunneling anisotropic magnetoresistance driven by resonant surface states: First-principles calculations of Fe(001) surface
• Spin-dependent tunneling in modulated structures of (Ga,Mn)As
• Tunneling Anisotropic Spin Polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices
• Large Tunneling Anisotropic Magnetoresistance mediated by Surface States