All-electrical measurements of direct spin Hall effect in GaAs with Esaki diode electrodes

Abstract

We report on measurements of direct spin Hall effect in a lightly n-doped GaAs channel. As spin detecting contacts we employed highly efficient ferromagnetic Fe/(Ga,Mn)As/GaAs Esaki diode structures. We investigate bias and temperature dependence of the measured spin Hall signal and evaluate the value of total spin Hall conductivity and its dependence on channel conductivity and temperature. From the results we determine skew scattering and side jump contribution to the total spin hall conductivity and compare it with the results of experiments on higher conductive n-GaAs channels[Phys. Rev. Lett. 105,156602(2010)]. As a result we conclude that both skewness and side jump contribution cannot be fully independent on the conductivity of the channel.

14 pages, 4 figures

References in corpus (5)

• Dissipationless Quantum Spin Current at Room Temperature
• Direct electronic measurement of the spin Hall effect
• Theory of Spin Hall conductivity in n-doped GaAs
• Observation of the inverse spin Hall effect in silicon
• Bias-dependent electron spin lifetimes in n-GaAs and the role of donor impact ionization

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