activity
20102015
most citedShot Noise Induced by Nonequilibrium Spin Accumulation

30 citations · 75 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2015★ 1 cited

Double island Coulomb blockade in (Ga,Mn)As-nanoconstrictions

S. Geißler, S. Pfaller, M. Utz +4

We report on a systematic study of the Coulomb blockade effects in nanofabricated narrow constrictions in thin (Ga,Mn)As films. Different low-temperature transport regimes have bee…

cond-mat.mes-hall2014★ 30 cited

Shot Noise Induced by Nonequilibrium Spin Accumulation

Tomonori Arakawa, Junichi Shiogai, Mariusz Ciorga +8

When an electric current passes across a potential barrier, the partition process of electrons at the barrier gives rise to the shot noise, reflecting the discrete nature of the el…

cond-mat.mtrl-sci2013★ 25 cited

Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes

Junichi Shiogai, Mariusz Ciorga, Martin Utz +6

We investigate the correlation between spin signals measured in three-terminal (3T) geometry by the Hanle effect and the spin accumulation generated in a semiconductor channel in a…

cond-mat.mes-hall2012★ 16 cited

All-electrical measurements of direct spin Hall effect in GaAs with Esaki diode electrodes

Markus Ehlert, Cheng Song, Mariusz Ciorga +4

We report on measurements of direct spin Hall effect in a lightly n-doped GaAs channel. As spin detecting contacts we employed highly efficient ferromagnetic Fe/(Ga,Mn)As/GaAs Esak…

cond-mat.mtrl-sci2011★ 3 cited

Nonuniform current density and spin accumulation in a 1 μm thick n-GaAs channel

Bernhard Endres, Mariusz Ciorga, Robert Wagner +6

The spin accumulation in an n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin po…

cond-mat.mtrl-sci2010

Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

Mariusz Ciorga, Christian Wolf, Andreas Einwanger +3

We report on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+-(Ga,Mn)As/n+-GaAs Esaki diode structu…