Shot Noise Induced by Nonequilibrium Spin Accumulation

Abstract

When an electric current passes across a potential barrier, the partition process of electrons at the barrier gives rise to the shot noise, reflecting the discrete nature of the electric charge. Here we report the observation of excess shot noise connected with a spin current which is induced by a nonequilibrium spin accumulation in an all-semiconductor lateral spin-valve device. We find that this excess shot noise is proportional to the spin current. Additionally, we determine quantitatively the spin-injection-induced electron temperature by measuring the current noise. Our experiments show that spin accumulation driven shot noise provides a novel means of investigating nonequilibrium spin transport.

5 pages and Supplemental Material

References in corpus (6)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Spin-torque shot noise in magnetic tunnel junctions
• Shot noise in a diffusive F-N-F spin valve
• Spin-Flip Noise in a Multi-Terminal Spin-Valve
• Shot Noise of Spin-Decohering Transport in Spin-Orbit Coupled Nanostructures
• Spin and Charge Shot Noise in Mesoscopic Spin Hall Systems

Cited by in corpus (7)

• Spin current noise of the spin Seebeck effect and spin pumping
• What Can We Learn from Noise? -- Mesoscopic Nonequilibrium Statistical Physics --
• Noise in tunneling spin current across coupled quantum spin chains
• Spin relaxation 1/f noise in graphene
• Shot noise in magnetic tunneling structures with two-level quantum dots
• Current noise generated by spin imbalance in presence of spin relaxation
• Detecting Spin Transport in Quantum Magnets with Photons