Spin Hall Effect in Doped Semiconductor Structures

Abstract

In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show their effects scale as ${\sigma }_{xy}^{SJ}/{\sigma }_{xy}^{SS}\sim (\hslash /\tau )/{\epsilon }_F$, with $\tau$ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n- and p-doped 3D and 2D GaAs structures, obtaining ${\sigma }_s/{\sigma }_c\sim 10^{-3}-10^{-4}$ where ${\sigma }_{s(c)}$ is the spin Hall (charge) conductivity, which is in reasonable agreement with the recent experimental results of Kato \textit{et al}. [Science \textbf{306}, 1910 (2004)] in n-doped 3D GaAs system.

5 pages, 2 figures

References in corpus (4)

• Spin current and polarization in impure 2D electron systems with spin-orbit coupling
• Spatial imaging of the spin Hall effect and current-induced polarization in two-dimensional electron gases
• Theory of Spin Hall conductivity in n-doped GaAs
• Spin-Hall effect in a disordered 2D electron-system

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