Spin lifetime in silicon in the presence of parasitic electronic effects

Abstract

A hybrid ferromagnet/semiconductor device is used to determine a lower bound on the spin lifetime for conduction electrons in silicon. We use spin precession to self-consistently measure the drift velocity vs. drift field of spin-polarized electrons and use this electronic control to change the transit time between electron injection and detection. A measurement of normalized magnetocurrent as a function of drift velocity is used with a simple exponential-decay model to argue that the lifetime obtained (~2 ns) is artificially lowered by electronic effects and is likely orders of magnitude higher.

References in corpus (2)

• Electronic measurement and control of spin transport in Silicon
• Determination of Interface Atomic Structure and Its Impact on Spin Transport Using Z-Contrast Microscopy and Density-Functional Theory

Cited by in corpus (8)

• Coherent spin transport through a 350-micron-thick Silicon wafer
• Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
• Experimental realization of a silicon spin field-effect transistor
• Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices
• Oblique Hanle Effect in Semiconductor Spin Transport Devices
• The Larmor clock and anomalous spin dephasing in silicon
• Non-ohmic spin transport in n-type doped silicon
• Suppressing spin relaxation in silicon