724 citations · 1.4k across the 11 of their papers we have counts for
12 papers
Undoped accumulation-mode Si/SiGe quantum dots
Matthew G. Borselli, Kevin Eng, Richard S. Ross +11
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrosta…
Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
Matthew G. Borselli, Kevin Eng, Edward T. Croke +12
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devi…
The Larmor clock and anomalous spin dephasing in silicon
Biqin Huang, Ian Appelbaum
Drift-diffusion theory - which fully describes charge transport in semiconductors - is also universally used to model transport of spin-polarized electrons in the presence of longi…
Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
Biqin Huang, Hyuk-Jae Jang, Ian Appelbaum
Evidence of spin precession and dephasing ("Hanle effect") induced by an external magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in se…
Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices
Biqin Huang, Ian Appelbaum
A spin transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift…
Oblique Hanle Effect in Semiconductor Spin Transport Devices
Jing Li, Biqin Huang, Ian Appelbaum
Spin precession and dephasing ("Hanle effect") provides an unambiguous means to establish the presence of spin transport in semiconductors. We compare theoretical modeling with exp…