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The Larmor clock and anomalous spin dephasing in silicon
Biqin Huang, Ian Appelbaum
Drift-diffusion theory - which fully describes charge transport in semiconductors - is also universally used to model transport of spin-polarized electrons in the presence of longi…
Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
Biqin Huang, Hyuk-Jae Jang, Ian Appelbaum
Evidence of spin precession and dephasing ("Hanle effect") induced by an external magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in se…
Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices
Biqin Huang, Ian Appelbaum
A spin transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift…
Oblique Hanle Effect in Semiconductor Spin Transport Devices
Jing Li, Biqin Huang, Ian Appelbaum
Spin precession and dephasing ("Hanle effect") provides an unambiguous means to establish the presence of spin transport in semiconductors. We compare theoretical modeling with exp…
Non-ohmic spin transport in n-type doped silicon
Hyuk-Jae Jang, Jing Xu, Jing Li +2
We demonstrate the injection and transport of spin-polarized electrons through n-type doped silicon with in-plane spin-valve and perpendicular magnetic field spin precession and de…
Coherent spin transport through a 350-micron-thick Silicon wafer
Biqin Huang, Douwe J. Monsma, Ian Appelbaum
We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession…
Experimental realization of a silicon spin field-effect transistor
Biqin Huang, Douwe J. Monsma, Ian Appelbaum
A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic f…
35% magnetocurrent with spin transport through Si
Biqin Huang, Lai Zhao, Douwe J. Monsma +1
Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In…
Spin lifetime in silicon in the presence of parasitic electronic effects
Biqin Huang, Douwe J. Monsma, Ian Appelbaum
A hybrid ferromagnet/semiconductor device is used to determine a lower bound on the spin lifetime for conduction electrons in silicon. We use spin precession to self-consistently m…
Electronic measurement and control of spin transport in Silicon
Ian Appelbaum, Biqin Huang, Douwe Monsma
The electron spin lifetime and diffusion length are transport parameters that define the scale of coherence in spintronic devices and circuits. Since these parameters are many orde…