The Larmor clock and anomalous spin dephasing in silicon
arXiv:1007.0233 · doi:10.1103/PhysRevB.82.241202
Abstract
Drift-diffusion theory - which fully describes charge transport in semiconductors - is also universally used to model transport of spin-polarized electrons in the presence of longitudinal electric fields. By transforming spin transit time into spin orientation with precession (a technique called the "Larmor clock") in current-sensing vertical-transport intrinsic Si devices, we show that spin diffusion (and concomitant spin dephasing) can be greatly enhanced with respect to charge diffusion, in direct contrast to predictions of spin Coulomb-drag diffusion suppression.
minor edits and updated refs
References in corpus (11)
- Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
- Electronic measurement and control of spin transport in Silicon
- Emergence of the persistent spin helix in semiconductor quantum wells
- Coherent spin transport through a 350-micron-thick Silicon wafer
- Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach
- Spin relaxation in -type GaAs quantum wells from a full microscopic approach
- Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
- Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices
- Spin lifetime in silicon in the presence of parasitic electronic effects
- Pulse-pumped double quantum dot with spin-orbit coupling
- Introduction to Spin-Polarized Ballistic Hot Electron Injection and Detection in Silicon