The Larmor clock and anomalous spin dephasing in silicon

Abstract

Drift-diffusion theory - which fully describes charge transport in semiconductors - is also universally used to model transport of spin-polarized electrons in the presence of longitudinal electric fields. By transforming spin transit time into spin orientation with precession (a technique called the "Larmor clock") in current-sensing vertical-transport intrinsic Si devices, we show that spin diffusion (and concomitant spin dephasing) can be greatly enhanced with respect to charge diffusion, in direct contrast to predictions of spin Coulomb-drag diffusion suppression.

minor edits and updated refs

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Cited by in corpus (16)

• Silicon spin communication
• Analysis of phonon-induced spin relaxation processes in silicon
• Spin-Orbit Symmetries of Conduction Electrons in Silicon
• Anisotropy-driven spin relaxation in germanium
• Field-induced negative differential spin lifetime in silicon
• Inelastic electron tunneling spectroscopy of local "spin accumulation" devices
• Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation
• Effect of anisotropic spin absorption on the Hanle effect in lateral spin valves
• Timescales of tunneling decay of a localized state
• Spin-Polarized Transient Electron Trapping in Phosphorus-doped Silicon
• Suppressing spin relaxation in silicon
• Spin relaxation via exchange with donor impurity-bound electrons
• Spin dynamics in tunneling decay of a metastable state
• Signature of Hanle Precession in Trilayer MoS2: Theory and Experiment
• Microwave manipulation of electrically injected spin polarized electrons in silicon
• Luminescence imaging of photoelectron spin precession during drift in p-type GaAs