Oblique Hanle Effect in Semiconductor Spin Transport Devices

Abstract

Spin precession and dephasing ("Hanle effect") provides an unambiguous means to establish the presence of spin transport in semiconductors. We compare theoretical modeling with experimental data from drift-dominated silicon spin-transport devices, illustrating the non-trivial consequences of employing oblique magnetic fields (due to misalignment or intentional, fixed in-plane field components) to measure the effects of spin precession. Model results are also calculated for Hanle measurements under conditions of diffusion-dominated transport, revealing an expected Hanle peak-widening effect induced by the presence of fixed in-plane magnetic bias fields.

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Cited by in corpus (16)

• Spin dynamics in semiconductors
• Extremely long quasiparticle spin lifetimes in superconducting aluminium using MgO tunnel spin injectors
• Analysis of phonon-induced spin relaxation processes in silicon
• Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
• Spin precession in anisotropic media
• Hanle effect missing in a prototypical organic spintronic device
• Hyperfine Interactions and Spin Transport in Ferromagnet-Semiconductor Heterostructures
• Non-ohmic spin transport in n-type doped silicon
• Spin-Polarized Transient Electron Trapping in Phosphorus-doped Silicon
• Coherent spin transport and suppression of spin relaxation in InSb nanowires with single subband occupancy at room temperature
• Suppressing spin relaxation in silicon
• Electrical Investigation of the Oblique Hanle Effect in Ferromagnet/Oxide/Semiconductor Contacts
• Spin polarization control in a 2-dimensional semiconductor
• The shape of the Hanle curve in spin-transport structures in the presence of the ac drive
• Triggering phase-coherent spin packets by pulsed electrical spin injection across an Fe/GaAs Schottky barrier
• Hanle lineshapes and spin-rotation signatures from in-plane anisotropic spin relaxation in heterogeneous spin devices