Spin polarization control in a 2-dimensional semiconductor

Abstract

Long carrier spin lifetimes are a double-edged sword for the prospect of constructing "spintronic" logic devices: Preservation of the logic variable within the transport channel or interconnect is essential to successful completion of the logic operation, but any spins remaining past this event will pollute the environment for subsequent clock cycles. Electric fields can be used to manipulate these spins on a fast timescale by careful interplay of spin-orbit effects, but efficient controlled depolarization can only be completely achieved with amenable materials properties. Taking III-VI monochalcogenide monolayers as an example 2D semiconductor, we use symmetry analysis, perturbation theory, and ensemble calculation to show how this longstanding problem can be solved by suitable manipulation of conduction electrons.

References in corpus (7)

• Graphene Spintronics
• Valley Dependent Optoelectronics from Inversion Symmetry Breaking
• Intrinsic electron mobility exceeding 1000 cm${}^2$/Vs in multilayer InSe FETs
• Spin noise spectroscopy in GaAs (110) quantum wells: Access to intrinsic spin lifetimes and equilibrium electron dynamics
• Symmetry, distorted bandstructure, and spin-orbit coupling of (group-III) metal-monochalcogenide monolayers
• Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
• Oblique Hanle Effect in Semiconductor Spin Transport Devices

Cited by in corpus (3)

• Solution-processed GaSe nanoflake-based films for photoelectrochemical water splitting and photoelectrochemical-type photodetectors
• Electrons, holes, and spin in the IV-VI monolayer 'four-six-enes'
• Geometry-Driven Charge and Spin Transport in $\beta 12$ Borophene Quantum Dots