Transit-Time Spin Field-Effect-Transistor

Abstract

We propose and analyze a four-terminal metal-semiconductor device that uses hot-electron transport through thin ferromagnetic films to inject and detect a charge-coupled spin current transported through the conduction band of an arbitrary semiconductor. This provides the possibility of realizing a spin field-effect-transistor in Si, using electrostatic transit-time control in a perpendicular magnetic field, rather than Rashba effect with spin-orbit interaction.

References in corpus (3)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Decoherence of transported spin in multichannel spin-orbit coupled spintronic devices: Scattering approach to spin density matrix from the ballistic to the localized regime

Cited by in corpus (5)

• Coherent spin transport through a 350-micron-thick Silicon wafer
• Electron Spin for Classical Information Processing: A Brief Survey of Spin-Based Logic Devices, Gates and Circuits
• Experimental realization of a silicon spin field-effect transistor
• Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices
• Oblique Hanle Effect in Semiconductor Spin Transport Devices