Transit-Time Spin Field-Effect-Transistor
arXiv:cond-mat/0703300 · doi:10.1063/1.2752015
Abstract
We propose and analyze a four-terminal metal-semiconductor device that uses hot-electron transport through thin ferromagnetic films to inject and detect a charge-coupled spin current transported through the conduction band of an arbitrary semiconductor. This provides the possibility of realizing a spin field-effect-transistor in Si, using electrostatic transit-time control in a perpendicular magnetic field, rather than Rashba effect with spin-orbit interaction.
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Cited by in corpus (11)
- Spin dynamics in semiconductors
- Coherent spin transport through a 350-micron-thick Silicon wafer
- Electron Spin for Classical Information Processing: A Brief Survey of Spin-Based Logic Devices, Gates and Circuits
- Experimental realization of a silicon spin field-effect transistor
- Spin polarized electron transport near the Si/SiO2 interface
- Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles
- Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices
- Oblique Hanle Effect in Semiconductor Spin Transport Devices
- Charge-Resistance Approach to Benchmarking Performance of Beyond-CMOS Information Processing Devices
- Modeling spin transport with current-sensing spin detectors
- Microscopic theory for the Doppler velocimetry of spin propagation in semiconductor quantum wells