724 citations · 1.4k across the 11 of their papers we have counts for
Showing 2008Show all
3 papers · 1 filter
cond-mat.mtrl-sci2008★ 59 cited
Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
Biqin Huang, Hyuk-Jae Jang, Ian Appelbaum
Evidence of spin precession and dephasing ("Hanle effect") induced by an external magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in se…
cond-mat.mtrl-sci2008★ 36 cited
Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices
Biqin Huang, Ian Appelbaum
A spin transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift…
cond-mat.mtrl-sci2008★ 30 cited
Oblique Hanle Effect in Semiconductor Spin Transport Devices
Jing Li, Biqin Huang, Ian Appelbaum
Spin precession and dephasing ("Hanle effect") provides an unambiguous means to establish the presence of spin transport in semiconductors. We compare theoretical modeling with exp…