48 citations · 231 across the 10 of their papers we have counts for
Showing 2011Show all
3 papers · 1 filter
cond-mat.mtrl-sci2011★ 38 cited
Field-induced negative differential spin lifetime in silicon
Jing Li, Lan Qing, Hanan Dery +1
We show that the electric field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxatio…
cond-mat.mtrl-sci2011★ 31 cited
Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation
Jing Li, Ian Appelbaum
Using a two-dimensional finite-differences scheme to model spin transport in silicon devices with lateral geometry, we simulate the effects of spin relaxation at interfacial bounda…
cond-mat.mtrl-sci2011★ 21 cited
Spin-Polarized Transient Electron Trapping in Phosphorus-doped Silicon
Yuan Lu, Jing Li, Ian Appelbaum
Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes:…