Pure spin current transport in a SiGe alloy

Abstract

Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with Si${}_{0.1}$Ge${}_{0.9}$, we study pure spin current transport in a degenerate SiGe alloy ($n\sim$ 5.0 $\times$ 10${}^{18}$ cm${}^{-3}$). Clear nonlocal spin-valve signals and Hanle-effect curves, indicating generation, manipulation, and detection of pure spin currents, are observed. The spin diffusion length and spin lifetime of the Si${}_{0.1}$Ge${}_{0.9}$ layer at low temperatures are reliably estimated to be $\sim$ 0.5 $\mu$m and $\sim$ 0.2 ns, respectively. This study demonstrates the possibility of exploring physics and developing spintronic applications using SiGe alloys.

5 pages, 3 figures

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Cited by in corpus (2)

• Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices
• Non-adiabatic Berry phase for semiconductor heavy holes under the coexistence of Rashba and Dresselhaus spin-orbit interactions