Electrons and holes in phosphorene

Abstract

We present a symmetry analysis of electronic bandstructure including spin-orbit interaction close to the insulating gap edge in monolayer black phosphorus ('phosphorene'). Expressions for energy dispersion relation and spin-dependent eigenstates for electrons and holes are found via simplification of a perturbative expansion in wavevector $k$ away from the zone center using elementary group theory. Importantly, we expose the underlying symmetries giving rise to substantial anisotropy in optical absorption, charge and spin transport properties, and reveal the mechanism responsible for valence band distortion and possible lack of a true direct gap.

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• Tunneling Spin Injection into Single Layer Graphene
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Cited by in corpus (6)

• The Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures
• Modulation of electronic and mechanical properties of phosphorene through strain
• Transport and Optical Properties of Single- and Bilayer Black Phosphorus with Defects
• Anisotropic exciton Stark shift in black phosphorus
• An Analytic Study of Strain Engineering the Electronic Bandgap in Single-Layer Black Phosphorus
• Collective modes in anisotropic double layer systems