Electronic structures of air-exposed few-layer black phosphorus by optical spectroscopy
arXiv:1903.00175 · doi:10.1103/PhysRevB.99.075427
Abstract
The electronic structure of few-layer(FL) black phosphorus(BP) sensitively depends on the sample thickness, strain and doping. In this paper, we show that it is also vulnerable to air-exposure. The oxidation of BP caused by air-exposure gives several optical signatures, including the broadening of resonance peaks and increased Stokes shift between infrared (IR) absorption and photoluminescence (PL) peaks. More importantly, air exposure causes blue shifts of all resonance peaks in IR absorption and PL spectra, with more prominent effects for thinner samples and higher order subband transitions. Our study alludes a convenient and exotic way for band-structure engineering of FL-BP through controllable air-exposure or defect creation.
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