Layer-dependent pressure effect on electronic structures of 2D black phosphorus
arXiv:2110.15500 · doi:10.1103/PhysRevLett.127.186401
Abstract
Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions exhibits strong layer-dependence. In sharp contrast to the bulk counterpart which undergoes a semiconductor to semimetal transition under ~1.8 GPa, the bandgap of 2 L increases with increasing pressure until beyond 2 GPa. Meanwhile, for a sample with a given layer number, the pressure-induced shift also differs for transitions with different indices. Through the tight-binding model in conjunction with a Morse potential for the interlayer coupling, this layer- and transition-index-dependent pressure effect can be fully accounted. Our study paves a way for versatile van der Waals engineering of two-dimensional BP.
16 pages, 4 figures
References in corpus (21)
- Black phosphorus field-effect transistors
- Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2
- The Renaissance of Black Phosphorus
- Broadband Linear-Dichroic Photodetector in a Black Phosphorus Vertical p-n Junction
- Direct Observation of Layer-Dependent Electronic Structure in Phosphorene
- Black phosphorus: narrow gap, wide applications
- Localization of Dirac electrons by Moire patterns in graphene bilayers
- Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
- Infrared fingerprints of few-layer black phosphorus
- Dynamic band structure tuning of graphene moiré superlattices with pressure
- Pressure induced metallization with absence of structural transition in layered MoSe2
- Pressure-induced Lifshitz transition in black phosphorus
- Determination of layer-dependent exciton binding energies in few-layer black phosphorus
- Strain-tunable van der Waals interactions in few-layer black phosphorus
- Mid-infrared polarized emission from black phosphorus light-emitting diodes
- Semiconductor to metal transition in bilayer phosphorene under normal compressive strain
- Exciton binding energies and luminescence of phosphorene under pressure
- Electronic structure and optic absorption of phosphorene under strain
- From Anomalous to Normal: Temperature Dependence of the Band Gap in Two-Dimensional Black Phosphorus
- Electronic structures of air-exposed few-layer black phosphorus by optical spectroscopy
- Robust and Pristine Top ological Dirac Semimetal Phase in Pressured Two-Dimensional Black Phosphorous