Electronic structure and optic absorption of phosphorene under strain

Abstract

We studied the electronic structure and optic absorption of phosphorene (monolayer of black phosphorus) under strain. Strain was found to be a powerful tool for the band structure engineering. The in-plane strain in armchair or zigzag direction changes the effective masse components along both directions, while the vertical strain only has significant effect on the effective mass in the armchair direction. The band gap is narrowed by compressive in-plane strain and tensile vertical strain. Under certain strain configurations, the gap is closed and the energy band evolutes to the semi-Dirac type: the dispersion is linear in the armchair direction and is gapless quadratic in the zigzag direction. The band-edge optic absorption is completely polarized along the armchair direction, and the polarization rate is reduced when the photon energy increases. Strain not only changes the absorption edge, but also the absorption polarization.

arXiv comment5 pages, 5 figures

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Cited by in corpus (5)

• Infrared fingerprints of few-layer black phosphorus
• Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors
• Strain-induced topological phase transition in phosphorene and phosphorene nanoribbons
• Layer-dependent pressure effect on electronic structures of 2D black phosphorus
• From Anomalous to Normal: Temperature Dependence of the Band Gap in Two-Dimensional Black Phosphorus