From Anomalous to Normal: Temperature Dependence of the Band Gap in Two-Dimensional Black Phosphorus
arXiv:2010.04901 · doi:10.1103/PhysRevLett.125.156802
Abstract
The temperature dependence of the band gap is crucial to a semiconductor. Bulk black phosphorus (BP) is known to exhibit an anomalous behavior. Through optical spectroscopy, here we show that the temperature effect on BP band gap gradually evolves with decreasing layer number, eventually turns into a normal one in the monolayer limit, rendering a crossover from the anomalous to the normal. Meanwhile, the temperature-induced shift in optical resonance also differs with different transition indices for the same thickness sample. A comprehensive analysis reveals that the temperature-tunable interlayer coupling is responsible for the observed diverse scenario. Our study provides a key to the apprehension of the anomalous temperature behavior in certain layered semiconductors.
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Cited by in corpus (6)
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- Layer-dependent pressure effect on electronic structures of 2D black phosphorus
- Room Temperature Optically and Magnetically Active Edges in Phosphorene Nanoribbons
- Quantum well confinement and competitive radiative pathways in the luminescence of black phosphorus layers
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