An Analytic Study of Strain Engineering the Electronic Bandgap in Single-Layer Black Phosphorus

Abstract

We present an analytic study, based on the tight-binding approximation, of strain effects on the electronic bandgap in single-layer black phosphorus. We obtain an expression for the variation of the bandgap induced by a general strain type that includes both tension in and out of the plane and shear, and use this to determine the most efficient strain direction for different strain types, along which the strongest bandgap manipulation can be achieved. We find that the strain direction that enables the maximum manipulation of the bandgap is not necessarily in the armchair or zigzag direction. Instead, to achieve the strongest bandgap modulation, the direction of the applied mechanical strain is dependent on the type of applied strain.

Physical Review B, accepted

References in corpus (19)

• The electronic properties of graphene
• Strain-induced gap modification in black phosphorus
• Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
• Superior mechanical flexibility of phosphorene and few-layer black phosphorus
• Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
• Negative Poisson's Ratio in Single-Layer Black Phosphorus
• Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
• Strain Engineering for Phosphorene: The Potential Application as a Photocatalyst
• Tuning of the electronic and optical properties of single layer black phosphorus by strain
• Enhanced thermoelectric performance of phosphorene by strain-induced band convergence
• Strong Thermal Transport Anisotropy and Strain Modulation in Single-Layer Phosphorene
• Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance
• Modulation of electronic and mechanical properties of phosphorene through strain
• Electrons and holes in phosphorene
• Lattice Vibrational Modes and Raman Scattering Spectra of Strained Phosphorene
• Transport and Optical Properties of Single- and Bilayer Black Phosphorus with Defects
• Anisotropic Ripple Deformation in Phosphorene
• Anisotropic Young's Modulus for Single-Layer Black Phosphorus: The Third Principle Direction Besides Armchair and Zigzag
• Giant Phononic Anisotropy and Unusual Anharmonicity of Phosphorene: Interlayer Coupling and Strain Engineering

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• Strain-induced Weyl and Dirac states and direct-indirect gap transitions in group-V materials
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• Straintronics in Phosphorene: Tensile vs Shear Strains and Their Combinations for Manipulating the Band Gap
• Tilt-induced anomalous thermal transport in normal/superconducting borophane junctions
• Strain-induced modulation of exchange interaction in monolayer zigzag nanoribbons of B${}_2$S
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