Strain-displacement relations and strain engineering in 2d materials

Abstract

We investigate the electromechanical coupling in 2d materials. For non-Bravais lattices, we find important corrections to the standard macroscopic strain - microscopic atomic-displacement theory. We put forward a general and systematic approach to calculate strain-displacement relations for several classes of 2d materials. We apply our findings to graphene as a study case, by combining a tight binding and a valence force-field model to calculate electronic and mechanical properties of graphene nanoribbons under strain. The results show good agreement with the predictions of the Dirac equation coupled to continuum mechanics. For this long wave-limit effective theory, we find that the strain-displacement relations lead to a renormalization correction to the strain-induced pseudo-magnetic fields. Implications for nanomechanical properties and electromechanical coupling in 2d materials are discussed.

7+3 pages, 4+1 figures

References in corpus (17)

• The electronic properties of graphene
• High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
• A tight-binding approach to uniaxial strain in graphene
• Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
• Superior mechanical flexibility of phosphorene and few-layer black phosphorus
• All-graphene integrated circuits via strain engineering
• Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
• Strain engineering in semiconducting two-dimensional crystals
• Parametrization of Stillinger-Weber Potential Based on Valence Force Field Model: Application to Single-Layer MoS2 and Black Phosphorus
• Symmetry-based approach to electron-phonon interactions in graphene
• Modulation of electronic and mechanical properties of phosphorene through strain
• Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices
• Gaps tunable by electrostatic gates in strained graphene
• A Stillinger-Weber Potential for Single-Layer Black Phosphorus, and the Importance of Cross-Pucker Interactions for Negative Poisson's Ratio and Edge Stress-Induced Bending
• An Analytic Study of Strain Engineering the Electronic Bandgap in Single-Layer Black Phosphorus
• Random gauge field effects on the conductivity of graphene sheets with disordered ripples
• Quantitative Chemistry and the Discrete Geometry of Conformal Atom-Thin Crystals

Cited by in corpus (24)

• Electronic and optical properties of strained graphene and other strained 2D materials: a review
• Strain-induced pseudomagnetic field in Dirac semimetal borophene
• Theory of 2D crystals: graphene and beyond
• Electronic Structure Theory of Strained Two-Dimensional Materials with Hexagonal Symmetry
• Local versus extended deformed graphene geometries for valley filtering
• Quantum Wires and Waveguides Formed in Graphene by Strain
• Valley polarization braiding in strained graphene
• Electron dynamics in strained graphene
• Enhanced asymmetric valley scattering by scalar fields in non-uniform out-of-plane deformations in graphene
• Phase-space representation of Landau and electron coherent states for uniaxially strained graphene
• Multi-scale approach for strain-engineering of phosphorene
• Straintronics beyond homogeneous deformation
• Anomalous Floquet tunneling in uniaxially strained graphene
• Strain-tuning of vacancy-induced magnetism in graphene nanoribbons
• Straintronics in Phosphorene: Tensile vs Shear Strains and Their Combinations for Manipulating the Band Gap
• Cooling of chiral heat transport in the quantum Hall effect graphene
• Ultrathin films of black phosphorus as suitable platforms for unambiguous observation of the orbital Hall effect
• Schrödinger-type 2D coherent states of magnetized uniaxially strained graphene
• Emergence of strain-induced moiré patterns and pseudo-magnetic field confined states in graphene
• Sublattice symmetry breaking and Kondo-effect enhancement in strained graphene
• Valence force model and nanomechanics of single-layer phosphorene
• Controlling electric and magnetic Purcell effects in phosphorene via strain engineering
• Theory for strained graphene beyond the Cauchy-Born rule
• The Impact of Mechanical Strain on Magnetic and Structural Properties of 2D Materials: A Monte Carlo study