Ultrathin films of black phosphorus as suitable platforms for unambiguous observation of the orbital Hall effect
arXiv:2307.03866 · doi:10.1103/PhysRevB.108.165415
Abstract
Phosphorene, a monolayer of black phosphorus, is a two-dimensional material that lacks a multivalley structure in the Brillouin zone and has negligible spin-orbit coupling. This makes it a promising candidate for investigating the orbital Hall effect independently of the valley or spin Hall effects. To model phosphorene, we utilized a DFT-derived tight-binding Hamiltonian, which is constructed with the pseudo atomic orbital projection method. For that purpose, we use the PAOFLOW code with a newly implemented internal basis that provides a fairly good description of the phosphorene conduction bands. By employing linear response theory, we show that phosphorene exhibits a sizable orbital Hall effect with strong anisotropy in the orbital Hall conductivity for the out-of-plane orbital angular momentum component. The magnitude and sign of the conductivity depend upon the in-plane direction of the applied electric field. These distinctive features enable the observation of the orbital Hall effect in this material unambiguously. The effects of strain and of a perpendicularly applied electric field on the phosphorene orbital-Hall response are also explored. We show that a supplementary electric field applied perpendicular to the phosphorene layer in its conductive regime gives rise to an induced in-plane orbital magnetization.
arXiv comment8 pages, 5 figures
References in corpus (49)
- Advanced capabilities for materials modelling with Quantum ESPRESSO
- Strain-induced gap modification in black phosphorus
- Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
- Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
- Electric Field Induced Topological Phase Transition in Two-Dimensional Few-layer Black Phosphorus
- Intrinsic Spin and Orbital Hall Effects from Orbital Texture
- Observation of the orbital Hall effect in a light metal Ti
- Orbitronics: the Intrinsic Orbital Hall Effect in p-Doped Silicon
- Orbitronics: Orbital Currents in Solids
- Classification of atomic-scale multipoles under crystallographic point groups and application to linear response tensors
- Symmetry-imposed shape of linear response tensors
- Giant orbital Hall effect and orbital-to-spin conversion in 3d, 5d, and 4f metallic heterostructures
- Electrons and holes in phosphorene
- Minimal model for higher-order topological insulators and phosphorene
- Magneto-Optical Detection of the Orbital Hall Effect in Chromium
- First-principles theory of field-effect doping in transition-metal dichalcogenides: Structural properties, electronic structure, Hall coefficient, and electrical conductivity
- Disentangling orbital and valley Hall effects in bilayers of transition metal dichalcogenides
- Orbital Hall effect as an alternative to valley Hall effect in gapped graphene
- Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes
- Orbital Edelstein effect as a condensed-matter analog of solenoid
- Giant Orbital Magneto-electric effect and Current-driven Magnetization Switching in Twisted Bilayer Graphene
- Strain-induced topological phase transition in phosphorene and phosphorene nanoribbons
- Orbitally Dominated Rashba-Edelstein Effect in Noncentrosymmetric Antiferromagnets
- Detection of long-range orbital-Hall torques
- Orbital Hall Insulating Phase in Transition Metal Dichalcogenide Monolayers
- Group theory for structural analysis and lattice vibrations in phosphorene systems
- Unconventional spin Hall effects in nonmagnetic solids
- Effective and accurate representation of extended Bloch states on finite Hilbert spaces
- Chirality-Induced Electrical Generation of Magnetism in Nonmagnetic Elemental Tellurium
- Connecting Higher-Order Topology with the Orbital Hall Effect in Monolayers of Transition Metal Dichalcogenides
- Toward Realistic Amorphous Topological Insulators
- Orbital Hall effect in bilayer transition metal dichalcogenides: From the intra-atomic approximation to the Bloch states orbital magnetic moment approach
- Emergent spin-valley-orbital physics by spontaneous parity breaking
- Accurate tight-binding Hamiltonian matrices from ab-initio calculations: Minimal basis sets
- Two-dimensional orbital Hall insulators
- Accurate Tight-Binding Hamiltonians for 2D and Layered Materials
- Optically-Controlled Orbitronics on a Triangular Lattice
- theory for phosphorene: Effective g-factors, Landau levels, and excitons
- Strain-displacement relations and strain engineering in 2d materials
- Orbital Hall effect and orbital edge states caused by s electrons
- Role of quantum confinement and interlayer coupling in CrI-graphene magnetic tunnel junctions
- Orbital magnetoelectric effect in zigzag nanoribbons of p-band systems
- Discovery of Higher-Order Topological Insulators using the Spin Hall Conductivity as a Topology Signature
- Orbital magnetoelectric effect in nanoribbons of transition metal dichalcogenides
- Spin and orbital transport in rare earth dichalcogenides: The case of EuS
- Multiorbital edge and corner states in black phosphorene
- Non-reciprocal magnons in a two dimensional crystal with off-plane magnetization
- Quantum theory of the Intrinsic Orbital Magnetoelectric Effect in itinerant electron systems at finite temperatures
- Orbital Gravito-Magnetoelectric response and Orbital magnetic quadrupole moment correction
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- Topological Nature of Orbital Chern Insulators
- Comparing the Extrinsic Orbital Hall Effect in Centrosymmetric and Noncentrosymmetric Systems: Insights from Bilayer Transition Metal Dichalcogenides
- Orbital Hall effect from orbital magnetic moments of Bloch states: the role of a new correction term