Strain-tuning of vacancy-induced magnetism in graphene nanoribbons
arXiv:1504.06956 · doi:10.1088/0953-8984/28/4/045302
Abstract
Vacancies in graphene lead to the appearance of localized electronic states with non-vanishing spin moments. Using a mean-field Hubbard model and an effective double-quantum dot description we investigate the influence of strain on localization and magnetic properties of the vacancy-induced states in semiconducting armchair nanoribbons. We find that the exchange splitting of a single vacancy and the singlet-triplet splitting for two vacancies can be widely tuned by applying uniaxial strain, which is crucial for spintronic applications.
References in corpus (20)
- The electronic properties of graphene
- Graphene Spintronics
- Magnetism in Graphene Induced by Single-Atom Defects
- A tight-binding approach to uniaxial strain in graphene
- Emergence of magnetism in graphene materials and nanostructures
- Spin qubits in graphene quantum dots
- All-graphene integrated circuits via strain engineering
- Magnetism in graphene nano-islands
- Disorder Induced Localized States in Graphene
- Vacancy induced magnetism in graphene and graphene ribbons
- Metallic Graphene Nanodisks
- Ultra-long distance interaction between spin qubits
- A Defective Graphene Phase Predicted to be a Room Temperature Ferromagnetic Semiconductor
- Strain Control of Magnetism in Transition-Metal-Atom Decorated Graphene
- Strain induced edge magnetism at zigzag edge in graphene quantum dot
- Strain-displacement relations and strain engineering in 2d materials
- Effect of Uniaxial Strain on Ferromagnetic Instability and Formation of Localized Magnetic States on Adatoms in Graphene
- Strain-induced modulation of magnetic interactions in graphene
- Theory of Vacancy-Induced Intrinsic Magnetic Impurity with Quasi-Localized Spin Moment in Graphene
- Tuning antiferromagnetism of vacancies with magnetic fields in graphene nanoflakes