Strain gauge fields for rippled graphene membranes under central mechanical load: an approach beyond first-order continuum elasticity

Abstract

We study the electronic properties of rippled freestanding graphene membranes under central load from a sharp tip. To that end, we develop a gauge field theory on a honeycomb lattice valid beyond the continuum theory. Based on the proper phase conjugation of the tight-binding pseudospin Hamiltonian, we develop a method to determine conditions under which continuum elasticity can be used to extract gauge fields from strain. Along the way, we resolve a recent controversy on the theory of strain engineering in graphene: There are no K-point dependent gauge fields. We combine this lattice gauge field theory with atomistic calculations and find that for moderate load, the rippled graphene membranes conform to the extruding tip without significant increase of elastic energy. Mechanical strain is created on a membrane only after a certain amount of load is exerted. In addition, we find that the deformation potential --even when partially screened-- induces qualitative changes on the electronic spectra, with Landau levels giving way to equally-spaced peaks.

8 pages, 7 figures

References in corpus (4)

• The electronic properties of graphene
• The structure of suspended graphene sheets
• All-graphene integrated circuits via strain engineering
• Charge inhomogeneities due to smooth ripples in graphene sheets

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